Analysis and characterization of CdTe material surface defects

Abstract To study the impact of various defects associated close to surface layer CdTe material, we use scanning laser Transient Current Technique. This gives us an overview different compositional inhomogeneities, such as dislocations, grain boundaries, and tellurium inclusions. Particularly, reconstructed high resolution spatial images provide a map electrically active defects. Each point contains recording current pulse, from which shape calculate drift times total collected charge. Charge mobility charge loss are extracted pulses show effects trapping polarization. In addition, investigate ALD alumina-CdTe interface negative fixed using both passivated non-passivated crystals.